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STF11N65M2

Part No STF11N65M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Extremely low gate charge
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh II Plus
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 12.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 410pF @ 100V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 25W (Tc)
Rds On (Maximum) @ Id, Vgs 670 mOhm @ 3.5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220FP
Package TO-220-3 Full Pack
Win Source Part Number 1260930-STF11N65M2
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STF11N65M2
Introduction Date May 09, 2014
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2032
Ultra Librarian 3D Model Ultra Librarian STF11N65M2 CAD Model

Description

Introducing the STF11N65M2 Power MOSFET by STMicroelectronics

The STF11N65M2 is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This particular MOSFET is part of STMicroelectronics' MDmesh™ M2 series, which features advanced super-junction technology that optimizes the balance between on-resistance and capacitance to ensure high efficiency and performance in power conversion applications.

Key Features

  • High Breakdown Voltage: With a drain-source voltage (V<sub>DS) of 650V, the STF11N65M2 is well-suited for high voltage applications, providing a robust and reliable solution for designers.
  • Low On-Resistance: The device boasts a low on-state resistance (R<sub>DS(on)) of 0.47Ω (max), contributing to reduced conduction losses and improved overall efficiency in power circuits.
  • Reduced Gate Charge: The MOSFET has a low gate charge (Q<sub>g), which minimizes switching losses and enhances performance in fast-switching applications.
  • Enhanced dv/dt Capability: The STF11N65M2 is engineered to handle high dv/dt rates, making it suitable for rugged environments and ensuring reliability under stressful conditions.

Applications

The versatility of the STF11N65M2 allows it to be used in a wide array of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-efficiency DC-DC converters
  • Welding equipment
  • Solar inverters
  • Uninterruptible Power Supplies (UPS)

Advanced Technology

STMicroelectronics' MDmesh™ M2 technology is at the core of the STF11N65M2, enabling the device to offer exceptional performance with low gate charge and low on-resistance, all while maintaining a high breakdown voltage. This technology makes the STF11N65M2 an excellent choice for power applications where efficiency is paramount.

Package Information

The STF11N65M2 is available in a TO-220FP package, which is designed for easy mounting and heat dissipation. Its through-hole design ensures strong mechanical anchoring to the PCB, which is vital for applications involving physical stress or where high reliability is necessary.

With its combination of high performance, reliability, and efficiency, the STF11N65M2 from STMicroelectronics is an ideal choice for engineers and designers looking to improve their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2022 $54.0990
105+ $0.9864 $103.5720
160+ $0.9556 $152.8960
220+ $0.9248 $203.4560
280+ $0.8940 $250.3200
375+ $0.8015 $300.5625
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,600 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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