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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series SuperMESH5
Packaging Reel - TR
Channel Type Type N
Technology MOSFET
Drain Source Voltage 800V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs 16.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 450pF @ 100V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 110W (Tc)
Rds On (Maximum) @ Id, Vgs 950 mOhm @ 3A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package DPAK
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1260905-STD8N80K5
Manufacturer Homepage www.st.com
Family Name STD8N80K5
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STD8N80K5 CAD Model

Description

Introducing the STD8N80K5 Power MOSFET by STMicroelectronics

The STD8N80K5 is a high-performance, N-channel Power MOSFET from the reputable semiconductor manufacturer STMicroelectronics. This device is designed to cater to a wide range of applications that require efficient power management and conversion. With its advanced technology and robust design, the STD8N80K5 is an ideal choice for designers looking for reliability and efficiency in their power circuits.

Key Features of STD8N80K5

  • High Voltage Capability: The STD8N80K5 boasts an 800V drain-source breakdown voltage (V<sub>DS), making it suitable for high-voltage applications. This feature ensures that the device can handle surges and spikes without compromising performance.
  • Low On-Resistance: With an on-resistance (R<sub>DS(on)) of only 1.7 Ohms, this MOSFET exhibits minimal conduction losses, leading to higher efficiency in power conversion and regulation tasks.
  • High Current Handling: The device can support a continuous drain current (I<sub>D) of up to 6 A, making it capable of driving significant loads without overheating or stress.
  • Reduced Gate Charge: A low gate charge (Q<sub>g) is a standout feature, which translates to reduced switching losses and better performance in high-frequency switching applications.
  • Enhanced Body Diode: The built-in body diode exhibits low reverse recovery time and charge, which is beneficial for applications involving commutation or those that require a freewheeling diode.

Applications

The STD8N80K5 is versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting Drivers
  • High-Efficiency DC-DC Converters
  • Adapters and Chargers
  • Motor Control Circuits
  • Power Management in Consumer and Industrial Electronics

Reliability and Performance

STMicroelectronics ensures that its products, like the STD8N80K5, are manufactured to the highest quality standards. This Power MOSFET is designed to deliver optimal performance with a focus on longevity, making it a reliable component for any power management solution. Whether you're developing power supplies or looking to enhance the efficiency of your existing designs, the STD8N80K5 is a solid choice that combines state-of-the-art technology with practical, real-world application.

For detailed specifications, application notes, and additional resources, designers and engineers are encouraged to consult the official datasheet and product documentation available from STMicroelectronics.

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Quantity Unit Price Ext. Price
14+ $3.6708 $51.3912
34+ $3.0119 $102.4046
52+ $2.9178 $151.7256
71+ $2.8237 $200.4827
92+ $2.7296 $251.1232
123+ $2.4472 $301.0056
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Availability: 7,656 pieces
MOQ: 14 pcs
Order Increment : 1 piece
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