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STB25NM50N

Part No STB25NM50N
Manufacturer STMicroelectronics
Catalog FETs - Single
Description N-CHANNEL 500V 0.11ohm - 22 A TO-220/FP/D/IPAK/TO-247 SECOND GENERATION MDmesh  MOSFET | MOSFET N-CH 500V 22A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 22A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 140mOhm at 11A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 84nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 2565pF at 25V
Power Dissipation (Maximum) 160W
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1260629-STB25NM50N
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB25NM50N CAD Model

Description

STB25NM50N - STMicroelectronics N-Channel MOSFET

The STB25NM50N is a high-performance N-Channel MOSFET from STMicroelectronics, renowned for its efficiency and reliability. This power MOSFET is designed using STMicroelectronics' innovative MDmesh™ technology, which combines the benefits of reduced on-resistance, high switching speed, and improved power density, making it an ideal choice for a wide range of power applications.

Key Features:

  • Voltage & Current: The STB25NM50N boasts a drain-source voltage (V<sub>DS) of 500V, which is suitable for high voltage applications. It can handle a continuous drain current (I<sub>D) of up to 22A, ensuring robust performance for high current demands.
  • Low On-Resistance: With an on-resistance (R<sub>DS(on)) of just 0.125Ω, this MOSFET ensures minimal power loss during operation, enhancing overall efficiency.
  • High Switching Speed: The fast switching capability of the STB25NM50N reduces switching losses and improves performance in applications that require rapid on-off cycles.
  • Thermal Performance: The device features an excellent thermal performance thanks to its maximum junction temperature (T<sub>j) of 150°C, which allows for stable operation even under high temperature conditions.
  • Package: Housed in a TO-220 package, the STB25NM50N is designed for easy integration into various circuit designs and ensures good heat dissipation.

Applications:

The STB25NM50N is versatile and can be used in a range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • High-efficiency DC/DC converters
  • Motor control applications
  • LED lighting solutions
  • Power management systems

With its robust design and advanced technology, the STB25NM50N from STMicroelectronics is a reliable choice for designers seeking a MOSFET that delivers both performance and efficiency. Whether it's for industrial power supplies or consumer electronics, this component ensures a high-quality solution for your power control needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2640 $58.7520
44+ $2.6784 $117.8496
67+ $2.5953 $173.8851
92+ $2.5110 $231.0120
119+ $2.4278 $288.9082
160+ $2.1760 $348.1600
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Availability: 3,500 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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