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Category OEM Souring
Win Source Part Number 1468812-STB22N60M6
Manufacturer STMicroelectronics
Package Tape & Reel (TR);Cut Tape (CT)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 100 V
Power Dissipation (Max) 130W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Ultra Librarian 3D Model Ultra Librarian STB22N60M6 CAD Model

Description

The STB22N60M6 by STMicroelectronics is a state-of-the-art MOSFET 1 N-Channel device designed for the highest levels of efficiency and power handling in electronic circuits. This component is engineered to meet the needs of modern applications that require robust, efficient, and reliable power management solutions. With its N-Channel configuration, the STB22N60M6 excels in fast switching applications, offering low on-state resistance and high thermal conductivity, essential for minimizing energy losses and improving performance in power conversion systems such as AC-DC converters, DC-DC converters, and motor drives. It leverages STMicroelectronics' expertise in semiconductor technology, providing a powerful tool for designers looking to enhance the efficiency, reliability, and compactness of their power management systems. The STB22N60M6 stands out for its ability to support high voltage operations while maintaining stability and longevity, making it an invaluable component for high-demand electrical applications.

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