ST3917BDT Dual N-channel 30 V, 0.0015 ohm, 40 A STripFET™ H6 Power MOSFET in DPAK package

The ST3917BDT is a state-of-the-art Dual N-channel MOSFET from STMicroelectronics that is designed to deliver high performance with low on-resistance and a high current rating. This power MOSFET is a part of the STripFET™ H6 series, which is renowned for its efficiency in power conversion applications. It is housed in a robust DPAK package, which is well-suited for compact and high-density power applications.

With a drain-source voltage (V_DS) of 30 V and a continuous drain current (I_D) of 40 A, this MOSFET is capable of handling significant power levels, making it an ideal choice for a wide range of applications, including motor drives, power management systems, and DC-DC converters. The low on-resistance (R_DS(on)) of just 0.0015 ohm at V_GS = 10 V ensures high efficiency and minimal power loss during operation.

The ST3917BDT is characterized by fast switching performance, which is critical in applications where power efficiency and speed are paramount. This is facilitated by its low gate charge (Q_g) and low input capacitance (C_iss), which contribute to reduced switching losses. Additionally, the device features an excellent figure of merit (FOM), which is a measure of its efficiency in switching applications.

The MOSFET's ruggedness is enhanced by its 100% avalanche tested design, which ensures reliability under extreme conditions. It also features a low threshold voltage (V_th), making it compatible with a wide range of drive voltages, increasing its versatility in different circuit designs.

In summary, the ST3917BDT from STMicroelectronics is a high-performance Dual N-channel MOSFET that offers low on-resistance, high current capability, and fast switching speeds. Its robust DPAK package and reliability under various conditions make it an excellent choice for engineers looking to improve the efficiency and performance of their power conversion systems.