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L6391D

Part No L6391D
Manufacturer STMicroelectronics
Catalog PMIC - Gate Drivers
Description IC DRIVER HV HI/LOW SIDE 14SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type IGBT, N-Channel MOSFET
Supply Voltage - Operating 12.5 V to 20 V
Logic Voltage - VIL, VIH 1.1V, 1.9V
Current - Peak Output (Source, Sink) 290mA, 430mA
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 600V
Rise and Fall Time 75ns, 35ns
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 14-SO
Win Source Part Number 1051304-L6391D
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian L6391D CAD Model

Description

STMicroelectronics L6391D High-Voltage Gate Driver

The L6391D from STMicroelectronics is a high-voltage gate driver specifically designed to drive N-channel MOSFETs or IGBTs. This powerful and efficient gate driver is a perfect solution for a variety of applications, including motor drives, power supplies, and inverter circuits, where reliable and efficient switching is crucial.

With an operating voltage range of 10.5V to 20V, the L6391D ensures compatibility with a wide array of control circuits and power stages. The device boasts an impressive output current capability, providing up to 290 mA source and 600 mA sink currents, which allows for quick and efficient charging and discharging of the gate capacitance of the power switches, thus reducing switching times and losses.

One of the key features of the L6391D is its integrated bootstrap diode, which simplifies the circuit design by reducing the number of external components required. This not only saves space on the PCB but also improves reliability and reduces overall system cost.

The L6391D also offers a range of protective features to ensure the longevity and safety of the application. It includes under-voltage lockout (UVLO) protection on both the low-side and high-side to prevent the power switches from operating in unsafe conditions. Additionally, the gate driver is equipped with an over-temperature shutdown feature, which provides an extra layer of protection against thermal overload.

The L6391D is available in a compact SO-8 package, which is ideal for space-constrained applications. Its robust design and high level of integration make it an excellent choice for designers looking to create compact, efficient, and reliable power management systems.

In summary, the STMicroelectronics L6391D gate driver is a versatile and robust solution for driving power MOSFETs and IGBTs. With its high current capability, integrated bootstrap diode, and comprehensive protection features, it stands out as a top choice for high-performance power conversion and motor control applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5854 $55.4890
80+ $1.3009 $104.0720
120+ $1.2602 $151.2240
165+ $1.2196 $201.2340
215+ $1.1789 $253.4635
285+ $1.0570 $301.2450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 100,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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