The SANYO Semiconductor (U.S.A) Corporation FET is a MOSFET N-Channel, Metal Oxide type transistor that features logic level gate, 4V drive.

• Type: MOSFET N-Channel, Metal Oxide
• Gate: Logic Level, 4V Drive
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 14A, 10V
• Gate Charge (Qg) @ Vgs: 50nC @ 10V
• Input Capacitance (Ciss) @ Vds: 3000pF @ 10V
• Package: 8-SOIC (0.173", 4.40mm Width)
• Manufacturer Device Package: 8-SOP
• Power - Max: 3.3W
• Operating Temperature: 150°C (TJ)
• Supply and Demand Status: Balanced