The 2SC5567 is a silicon NPN epitaxial planar transistor produced by SANYO Semiconductor. It is designed for use in high-frequency power amplifier applications.

Applications:

• High-frequency power amplifiers
• Oscillator circuits
• RF power amplification stages
• Transmitter output stages

Features:

• High collector power dissipation
• High transition frequency
• Low feedback capacitance
• Excellent power gain
• NPN Silicon Epitaxial Planar Transistor

Benefits:

• Enables high-power amplification at high frequencies.
• Provides stable oscillation due to low feedback capacitance.
• Offers efficient power transfer in RF applications.
• Facilitates compact circuit designs due to its small size.
• Robust performance under demanding operating conditions due to its high collector power dissipation.

Technical Specifications:

The 2SC5567 transistor features a collector-emitter voltage (VCEO) of 60V, a collector current (IC) of 7A, and a collector power dissipation (PC) of 80W. Its transition frequency (fT) is typically 140 MHz. The DC current gain (hFE) is typically between 50 and 200. It is typically supplied in a TO-220 package. Detailed specifications can be found in the manufacturer's datasheet.