The K9F1G08U0A-JIB0 is a 1Gbit (128M x 8-bit) NAND Flash Memory device manufactured by Samsung. This memory is designed for mass storage applications requiring high density, low cost, and non-volatile storage. Utilizing Samsung's advanced NAND flash technology, it provides a reliable and efficient solution for storing large amounts of data in various consumer and industrial applications.

Applications

• Solid State Drives (SSDs)
• USB Flash Drives
• Memory Cards (SD, microSD)
• Embedded Systems
• Mobile Phones and Tablets

Features

• High Density: 1Gbit (128M x 8-bit)
• Supply Voltage: 2.7V to 3.6V
• Page Size: (512 + 16) Bytes
• Block Size: (16K + 512) Bytes
• Asynchronous Data Interface
• Data Retention: 10 years
• Endurance: 100,000 Program/Erase Cycles (typical)
• Operating Temperature: -25°C to +85°C

Benefits

• High Storage Capacity: Provides ample storage for data-intensive applications.
• Non-Volatile Memory: Ensures data retention even without power.
• Low Cost: NAND Flash technology offers a cost-effective storage solution.
• Reliable Performance: High endurance and long data retention provide reliable operation.
• Compact Size: Allows integration into small form factor devices.

Technical Specifications

The K9F1G08U0A-JIB0 operates with a supply voltage ranging from 2.7V to 3.6V. The page size is (512 + 16) bytes, and the block size is (16K + 512) bytes. It utilizes an asynchronous data interface. The data retention is specified as 10 years. The typical endurance is 100,000 program/erase cycles. The operating temperature range is -25°C to +85°C. Please refer to the product datasheet for detailed timing diagrams, pinout information, and electrical characteristics.