The Samsung K6T4016C3B-TB55 is a high-speed, low-power 256K x 16 bit Static Random Access Memory (SRAM). It is designed for use in applications that require fast data access times and minimal power consumption. This SRAM provides a reliable and efficient memory solution for various electronic systems.

Applications

• Cache memory in embedded processors
• Buffer memory in networking equipment
• Data storage in industrial control systems
• Memory for portable devices
• Look-up tables in digital signal processing (DSP) systems

Features

• Fast access time: Typically around 55ns
• Low power consumption: Active and standby modes for energy efficiency
• Single 3.3V power supply
• TTL compatible inputs and outputs
• Data retention capability: Ensures data is preserved even during power loss
• Operating temperature range: Typically 0°C to 70°C
• Package: Available in various packages like TSOP

Benefits

• Improved system performance due to fast data access speeds
• Extended battery life in portable devices due to low power operation
• Simplified system design with a single 3.3V power supply
• Easy integration with other digital components using TTL compatible I/O
• Reliable data storage, even in the event of power failures
• Versatile application in a wide range of environments

Additional Details

The K6T4016C3B-TB55 utilizes advanced CMOS technology to achieve its low power and high-speed characteristics. The device supports asynchronous operation, meaning read and write cycles are independent of a clock signal. It features separate data input and output pins for simplified memory interfacing. The SRAM is designed to provide stable and reliable operation over its specified voltage and temperature ranges. It's particularly well-suited for applications where high-speed data access is paramount and power efficiency is a significant consideration. The package type dictates the physical mounting requirements for integrating the device into a circuit board.