The K4W2G1646P-HC12 is a 2Gb (Gigabit) DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) manufactured by Samsung. It's designed for high-performance memory applications, offering a balance of speed, density, and power efficiency.

Applications

• Desktop and laptop computers
• Graphics cards
• Gaming consoles
• Networking devices
• Embedded systems

Features

• 2Gb (256M x 8) memory organization
• DDR3 interface with data rates up to 1600 Mbps (PC3-12800)
• Operating voltage of 1.5V
• 8-bit prefetch architecture
• Double data rate architecture; two data transfers per clock cycle
• Auto precharge option for single row activation
• ZQ calibration to optimize signal integrity
• Available in FBGA (Fine-Pitch Ball Grid Array) package

Benefits

• High memory bandwidth for demanding applications.
• Increased system performance with fast data transfer rates.
• Reduced power consumption compared to older DDR technologies.
• Improved signal integrity through ZQ calibration.
• Compact form factor with FBGA packaging.

Technical Specifications

The K4W2G1646P-HC12 operates at a voltage of 1.5V and is compliant with JEDEC standards for DDR3 SDRAM. The device supports various timing parameters and configurations to optimize performance for different applications. The FBGA package offers a small footprint and excellent thermal performance.

The DDR3 architecture enables high data transfer rates by transferring data on both the rising and falling edges of the clock signal. The 8-bit prefetch architecture further enhances performance by fetching multiple data bits per memory access.

The K4W2G1646P-HC12 is designed for reliability and is commonly used in a wide range of consumer and industrial applications where high-performance memory is required.