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K4T51163QZ-ZCE7

Part No K4T51163QZ-ZCE7
Manufacturer Samsung
Catalog DDR
Description DDR2-800 32Mx16 Pb-Free
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 941790-K4T51163QZ-ZCE7
Series *
Ultra Librarian 3D Model Ultra Librarian K4T51163QZ-ZCE7 CAD Model

Description

The Samsung K4T51163QZ-ZCE7 is a DDR2 SDRAM (Double Data Rate 2 Synchronous Dynamic Random-Access Memory) chip. This memory component is designed for a variety of applications where high memory bandwidth and efficient data handling are essential. The specific part number signifies a particular configuration and performance level within Samsung's DDR2 product line.

Applications

  • Desktop Computers: Used as system memory (RAM) for storing actively used program code and data.
  • Laptop Computers: Provides memory for portable computers.
  • Graphics Cards: Can function as video memory (VRAM) for storing textures, frame buffers, and other graphics-related information.
  • Gaming Consoles: Provides storage for game data, levels, and game states.
  • Networking Equipment: Can be used in routers, switches, and other networking devices.
  • Embedded Systems: Found in embedded applications requiring DDR2 memory.

Features

  • DDR2 Technology: Offers improved performance and higher bandwidth compared to the original DDR SDRAM.
  • 512Mb Density: Has a memory capacity of 512 Megabits (64MB).
  • Data Rate: Operates at a specific data transfer rate; the ZCE7 suffix indicates the performance grade (actual speed needs to be confirmed by the datasheet, but likely corresponds to a specific frequency within the DDR2 range).
  • Double Data Rate: Transfers data on both the rising and falling edges of the clock signal, effectively doubling the data rate.
  • On-Die Termination (ODT): Enhances signal integrity and minimizes reflections, contributing to higher speed operation.
  • Differential Clock Inputs: Provides better noise immunity and timing accuracy.
  • RoHS Compliant: Complies with the Restriction of Hazardous Substances directive.

Benefits

  • Enhanced System Performance: Delivers rapid memory access, which improves application responsiveness and overall system speed.
  • High Bandwidth: Supports efficient data transfer for demanding tasks like gaming and video processing.
  • Improved Power Efficiency: DDR2 technology generally offers better power efficiency compared to DDR.
  • Reliable Operation: Samsung's memory products are known for their reliability and stability.
  • Compatibility: Designed to work with systems that support DDR2 memory.

Additional Details

The K4T51163QZ-ZCE7 usually comes in a FBGA (Fine-Pitch Ball Grid Array) package for surface mounting. It requires a specific supply voltage, typically 1.8V for DDR2 SDRAM. The timing parameters, such as CAS latency (CL), RAS-to-CAS delay (tRCD), and RAS precharge time (tRP), are critical for correct functionality and must be configured correctly in the system BIOS or memory controller. The ZCE7 suffix denotes specific speed grade and timing characteristics that are detailed in the Samsung datasheet.

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