The Samsung K4T1G164QQ-HCE6000 is a DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) component, designed to deliver high-speed data transfer and efficient power consumption. This memory chip is commonly used in various computing applications requiring substantial memory capacity and bandwidth.

Applications:

• Desktop PCs
• Laptop computers
• Gaming consoles
• Graphics cards
• Embedded systems

Features:

• DDR3 technology for high-speed data transfer
• 1Gb (64M x 16) memory organization
• Operating Voltage: 1.5V
• Data transfer rates up to 1600 Mbps
• RoHS compliant
• FBGA package for efficient thermal management and compact design

Benefits:

• Improved system performance due to fast memory access
• Enhanced multitasking capabilities with high memory capacity
• Enhanced gaming and graphics performance
• Reduced power consumption compared to DDR2 SDRAM
• Improved reliability and stability in demanding applications

Additional Details:

The K4T1G164QQ-HCE6000 incorporates features such as Write Leveling, On-Die Termination (ODT), and Dynamic Calibration to optimize signal integrity and power efficiency. These features contribute to the overall stability and reliability of the memory subsystem. The FBGA package allows for compact integration into various system designs. Built with advanced semiconductor technology, this DDR3 SDRAM component offers high performance and long-term reliability in diverse computing environments.