The Samsung K4T1G084QJ-BCF8 is a 1Gbit DDR2 SDRAM component. It is designed for applications requiring high bandwidth and efficient memory performance. This memory chip offers a balance of speed, density, and power consumption, making it suitable for a range of computing and embedded systems.

Applications

• Graphics cards
• Gaming consoles
• Networking devices
• Digital TVs
• Set-top boxes

Features

• 1Gbit (128M x 8) memory density
• DDR2 interface for high-speed data transfer
• Operating frequency up to 800MHz
• Double data rate architecture; two data transfers per clock cycle
• Differential clock inputs (CK, /CK)
• Data mask (DM) for write masking
• On-chip DLL (Delay-Locked Loop) for improved timing
• Lead-free and RoHS compliant

Benefits

• Enhanced system performance due to high memory bandwidth
• Improved graphics rendering capabilities
• Efficient data processing in networking applications
• Reduced power consumption compared to older memory technologies
• Increased memory capacity for demanding applications

Technical Specifications

The K4T1G084QJ-BCF8 operates at a voltage of 1.8V. It supports various DDR2 features such as prefetch of 4 bits per memory location. The component is available in a FBGA (Fine-pitch Ball Grid Array) package for surface mounting on PCBs. The operating temperature range is typically from 0°C to 85°C. It is designed to meet the JEDEC standards for DDR2 SDRAM.

This DDR2 SDRAM device offers a reliable and cost-effective memory solution for diverse applications. Its high-speed interface and large capacity contribute to improved overall system performance.