The Samsung K4T1G084QG-BCE6T00 is a DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) component. This part has a capacity of 1Gb and is organized as 128M x 8. It's designed for systems requiring high bandwidth and relatively low latency.

Applications

• Desktop and laptop computers
• Servers
• Networking equipment
• Graphics cards
• Gaming consoles
• Embedded systems

Features

• DDR3 technology
• Capacity: 1Gb (128M x 8)
• Data transfer rates up to 1600 Mbps or higher (determined by BCE6T00)
• 8-bit prefetch architecture
• Double data rate architecture: two data transfers per clock cycle
• Differential clock inputs (CK, /CK)
• Command Address entry mask (CKE)
• On-chip termination (ODT)
• Write leveling
• Lead-free and RoHS compliant

Benefits

• Increased system performance through high memory bandwidth.
• Improved application responsiveness.
• Enhanced multitasking.
• Lower power consumption compared to previous DDR generations.
• Stable and reliable operation.

Additional Details

The K4T1G084QG-BCE6T00 operates at 1.5V. It features an 8n-bit prefetch architecture to achieve high-speed operation. The component is available in a FBGA (Fine-pitch Ball Grid Array) package, providing a compact footprint. The integrated on-die termination (ODT) improves signal integrity. Write leveling ensures data integrity, especially at high speeds.