The K4S641632D-TI80 is a 64M x 16 bit Synchronous DRAM (SDRAM) from Samsung. It is designed for high-performance memory applications requiring substantial bandwidth and low latency.

Applications

• Graphics cards
• Gaming consoles
• Networking equipment
• High-end computing devices
• Video processing systems

Features

• 64M x 16 bit organization
• Synchronous interface
• Clock rate up to 133 MHz
• LVTTL compatible inputs and outputs
• Single 3.3V power supply
• 4 banks operation
• Burst Length: 1, 2, 4, 8, Full Page
• Burst Type: Sequential & Interleave
• CAS Latency: 2, 3
• Auto precharge and controlled precharge
• Refresh cycles: (4096 cycles / 64 ms)

Benefits

• High bandwidth for improved system performance
• Low latency for faster data access
• Large memory capacity for demanding applications
• LVTTL compatibility for easy integration
• Single power supply simplifies design

Additional Details

The K4S641632D-TI80 is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x16’s 33,554,432-bit banks is organized as 4,096 rows x 512 columns x 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an Activate command, which is then followed by a Read or Write command. The device provides programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst terminate option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The K4S641632D-TI80 is available in a 54-pin TSOP II package.