The K4S281632B-TE1L000 is a high-performance SDRAM (Synchronous Dynamic Random-Access Memory) chip manufactured by Samsung. This component is designed for use in applications requiring rapid data access and storage. Its architecture and features make it suitable for integration into systems that demand efficient memory operations.

Applications:

• Graphics cards
• Gaming consoles
• Networking equipment
• Set-top boxes
• Automotive infotainment systems

Features:

• Double Data Rate (DDR) architecture
• High-speed clock frequency
• Burst mode operation
• Auto precharge function
• 8 internal banks for concurrent operations
• Low power consumption

Benefits:

• Enhanced system responsiveness
• Improved data transfer rates
• Reduced power consumption
• Greater memory bandwidth
• Stable and reliable performance

Technical Specifications:

While precise specifications may vary slightly depending on the specific production batch and configuration, typical specifications include:

• Capacity: 128Mb (Megabits)
• Organization: 4M x 4 x 32
• Interface: DDR SDRAM
• Clock Frequency: Up to 166 MHz
• Data Rate: Up to 333 Mbps
• Operating Voltage: 2.5V
• Operating Temperature: 0°C to +70°C

The K4S281632B-TE1L000 is a reliable and efficient memory solution for various applications that require high-speed data processing and storage.