The Samsung Electro-Mechanics America, Inc. K4R271669H-DCS8 is a memory integrated circuit that has low popularity in the market with a balanced supply and demand status.

• Capacity: 16Mbit
• Data Rate: 166MHz
• Burst Length: 4
• CAS Latency: 3
• Description: It is designed to offer high-speed performance and low power consumption. The K4R271669H-DCS8 has a capacity of 16Mbit and a data rate of 166MHz. It features a burst length of 4 and a CAS latency of 3. This memory integrated circuit is suitable for various applications that require high-speed data transfer and low power consumption.