The Samsung K4H561638F-TIB3 is a 512Mb DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory) component, designed to provide high bandwidth and efficient data transfer rates. Manufactured by Samsung, a leading provider of memory solutions, this chip is suitable for a wide range of applications.

Applications

• Graphics cards
• Gaming consoles
• Networking devices
• High-performance computing
• Embedded systems requiring significant memory

Features

• Density: 512Mb (32M x 16)
• Organization: 32M x 16 bits
• Interface: DDR (Double Data Rate)
• Clock Frequency: Compliant with JEDEC standards for DDR SDRAM
• Data Rate: Up to [Specify Data Rate, e.g., 400 Mbps, if available, otherwise omit]
• Voltage: Typically 2.5V
• Package: [Specify Package, e.g., FBGA, if available, otherwise omit]
• Operating Temperature: [Specify Temperature Range, if available, otherwise omit]

Benefits

• High Bandwidth: Offers fast data transfer rates, enhancing system performance.
• Improved Performance: Provides high-speed memory access, minimizing latency and improving system responsiveness.
• Power Efficient: Designed for low power consumption, making it suitable for various applications.
• Reliable Operation: Samsung's quality manufacturing ensures reliable and stable performance.
• Compact Design: [Mention if package is compact, e.g., FBGA allows for high-density implementations, if available, otherwise omit]

Additional Details

The K4H561638F-TIB3 adheres to JEDEC standards for DDR SDRAM. Please refer to the official Samsung datasheet for specific timing parameters and operating conditions. This component is well-suited for applications requiring reliable and high-performance memory.