The Samsung K4H511638C-UCB3T is a 512Mbit DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory) component. It is designed for use in applications requiring high-speed data transfer and storage, typical in computing and embedded systems.

Applications

• Desktop and laptop computers
• Graphics cards
• Gaming consoles
• Networking equipment
• Embedded systems requiring external memory

Features

• 512Mbit (32M x 16) memory organization
• Double data rate architecture: two data transfers per clock cycle
• Data rate up to DDR333 (166 MHz clock frequency)
• Differential clock inputs (CK and /CK)
• 8 internal banks for concurrent operation
• Programmable burst length: 2, 4, 8
• Programmable CAS latency (CL): 2, 2.5, 3
• Auto precharge and auto refresh capabilities
• Power-down mode for energy saving
• Operating voltage: 2.5V
• Lead-free package

Benefits

• High bandwidth for fast data access
• Improved system performance due to double data rate
• Low power consumption compared to older memory technologies
• Increased memory capacity for demanding applications
• Reliable data storage with error correction capabilities

Additional Details

The K4H511638C-UCB3T uses a 66-pin TSOP (Thin Small Outline Package). It's designed to meet the performance requirements of various applications that require fast and reliable memory. It supports JEDEC standards for DDR SDRAM, ensuring compatibility with a wide range of systems. The auto precharge feature simplifies memory management, while the power-down mode reduces power consumption during idle periods. Its high bandwidth and relatively low latency make it a suitable choice for high-performance applications. The specific UCB3T speed grade designates the maximum clock frequency and timings supported.