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K4B2G0846Q-BCKO

Part No K4B2G0846Q-BCKO
Manufacturer Samsung
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Categories Uncategorized
Manufacturer Samsung
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 826574-K4B2G0846Q-BCKO
Ultra Librarian 3D Model Ultra Librarian K4B2G0846Q-BCKO CAD Model

Description

The K4B2G0846Q-BCKO is a 2Gb DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random-Access Memory) chip manufactured by Samsung. This memory component is designed for applications requiring high bandwidth and low power consumption, making it suitable for various computing and embedded systems.

Applications

  • Desktop PCs: Used as main system memory for general computing tasks.
  • Laptop Computers: Provides memory for portable computing devices.
  • Gaming Consoles: Supports high-performance graphics processing.
  • Networking Equipment: Used in routers, switches, and other networking devices.
  • Embedded Systems: Found in various embedded applications, including industrial control and automotive systems.

Features

  • 2Gb Density: Offers a memory capacity of 2 Gigabits.
  • DDR3 Technology: Utilizes DDR3 technology for high-speed data transfer.
  • 8-bit Data Width: Organizes data in an 8-bit wide configuration.
  • Low Power Consumption: Designed for energy efficiency.
  • High Bandwidth: Enables fast data access and processing.
  • Operating Voltage: Operates at a standard DDR3 voltage (typically 1.5V).
  • RoHS Compliant: Complies with RoHS environmental standards.

Benefits

  • Increased System Performance: High-speed data transfer enhances application performance.
  • Reduced Power Consumption: Energy-efficient design extends battery life in portable devices.
  • Improved Data Throughput: Faster memory access improves overall system responsiveness.
  • Enhanced Gaming Experience: Supports smooth and responsive gaming performance.
  • Reliable Operation: Ensures data integrity and stable system operation.

Additional Details

The K4B2G0846Q-BCKO is typically packaged in a FBGA (Fine-Pitch Ball Grid Array) for surface mounting. Detailed specifications, including timing parameters (such as CAS latency, RAS-to-CAS delay, and precharge time), operating temperature range, and power consumption characteristics, are available in the device datasheet. The device is designed to comply with JEDEC standards for DDR3 SDRAM. It uses a prefetch architecture to improve data access efficiency. Proper termination and signal integrity techniques are crucial for reliable operation at high speeds.

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