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Same model may have multiple batches, images only for reference.
TT8M1TR Real Image
Same model may have multiple batches, images only for reference.

TT8M1TR

Part No TT8M1TR
Manufacturer Rohm Semiconductor
Catalog FETs - Arrays
Description MOSFET N/P-CH 20V 2.5A TSST8
Datasheet
TT8M1TR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Rohm Semiconductor
Packaging Reel
FET Type N and P-Channel
FET Feature Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) at 25°C 2.5A
Rds On (Maximum) at Id, Vgs 72mOhm at 2.5A, 4.5V
Vgs(th) (Maximum) at Id 1V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 3.6nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 260pF at 10V
Power - Max 1W
Temperature Range - Operating 150°C
Mounting Style SMD
Manufacturer Package 8-SMD, Flat Lead
Supplier Device Package 8-TSST
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Balance
Win Source Part Number 802529-TT8M1TR
Ultra Librarian 3D Model Ultra Librarian TT8M1TR CAD Model

Description

The 802529-TT8M1TR is a N and P-Channel FET by Rohm Semiconductor.

  • Gate: Logic Level
  • Drive: 1.5V
  • Maximum Drain to Source Voltage (Vdss): 20V
  • Maximum Power: 1W
  • Supplier Device Package: 8-TSST
  • Manufacturer Package: 8-SMD, Flat Lead
  • Rds On (Maximum) @ Id, Vgs: 72mOhm @ 2.5A, 4.5V
  • Gate Charge (Qg) (Maximum) @ Vgs: 3.6nC @ 4.5V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 260pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Vgs(th) (Maximum) @ Id: 1V @ 1mA
  • Operating Temperature Range: 150°C

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Quantity Unit Price Ext. Price
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165+ $0.6085 $100.4025
255+ $0.5894 $150.2970
355+ $0.5704 $202.4920
455+ $0.5514 $250.8870
610+ $0.4944 $301.5840
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