The SH8K26GZ0TB1 is a dual N-Channel FET, MOSFET array product from Rohm Semiconductor. It is an active discrete semiconductor product categorized under Transistors - FETs, MOSFETs.

• Win Source Part Number: 734329
• Drain to Source Voltage (Vdss): 40V
• Continuous Drain Current (Id): 6A @ 25°C
• Rds On (Max): 38mOhm @ 6A and 10V
• Vgs(th) (Max): 2.5V @ 1mA
• Maximum Power Dissipation: 2W @ ambient temperature (Ta)
• Package Type: 8-SOIC
• Package Width: 0.154 inches
• Gate Charge (Qg) (Max): 2.9nC @ 5V
• Input Capacitance (Ciss) (Max): 280pF @ 10V
• Operating Temperature Range: -40°C to 150°C
• ECCN: EAR99
• MSL Level: 1