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SCT2280KEC

Name: SCT2280KEC
Brand: Rohm Semiconductor
SKU: 813650
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	SCT2280KEC
Manufacturer	Rohm Semiconductor
Catalog	FETs - Single
Description	MOSFET N-CH 1200V 14A TO-247
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Manufacturer	Rohm Semiconductor
Packaging	Tube
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200V
Current - Continuous Drain (Id) at 25°C	14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Maximum) at Id, Vgs	364mOhm at 4A, 18V
Vgs(th) (Maximum) at Id	4V at 1.4mA
Gate Charge (Qg) (Maximum) at Vgs	36nC at 18V
Maximum Vgs	+22V, -6V
Input Capacitance (Ciss) (Maximum) at Vds	667pF at 800V
Power Dissipation (Maximum)	108W (Tc)
Temperature Range - Operating	175°C
Mounting Style	Through Hole
Supplier Device Package	TO-247
Manufacturer Package	TO-247-3
Manufacturer Pack Quantity	360
MSL Level	1 (Unlimited)
Popularity	Low
Supply and Demand Status	Limited
Win Source Part Number	813653-SCT2280KEC
Ultra Librarian 3D Model	Ultra Librarian SCT2280KEC CAD Model

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Description

The SCT2280KEC is an N-channel SiCFET (Silicon Carbide) electronic component manufactured by Rohm Semiconductor.

Supply and Demand Status: Limited
Package: TO-247
Maximum Power Dissipation @ Tc: 108W
Maximum Drain to Source Voltage: 1200V

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