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Manufacturer Rohm Semiconductor
Packaging Tube
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Maximum) 650V
Current - Average Rectified (Io) 8A
Voltage - Forward (Vf) (Maximum) at If 1.55V at 8A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0ns
Current - Reverse Leakage at Vr 160μA at 600V
Capacitance at Vr, F 291pF at 1V, 1MHz
Mounting Style Through Hole
Manufacturer Package TO-220-2 Full Pack
Supplier Device Package TO-220FM
Operating Temperature - Junction 175°C (Maximum)
Part Number Series SCS208
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 813159-SCS208AMC
Ultra Librarian 3D Model Ultra Librarian SCS208AMC CAD Model

Description

The SCS208AMC is a silicon carbide (SiC) Schottky barrier diode manufactured by Rohm Semiconductor. These diodes are specifically designed for high-performance power applications, offering superior switching characteristics, higher temperature operation, and enhanced reliability compared to traditional silicon diodes. SiC Schottky diodes are ideal for use in power factor correction (PFC) circuits, motor drives, and other high-frequency power conversion systems. The SCS208AMC provides efficient and robust performance in demanding environments.

Applications:

  • Power factor correction (PFC) circuits
  • Motor drives
  • High-frequency power converters
  • Solar inverters
  • Electric vehicle (EV) chargers

Features:

  • Silicon carbide (SiC) material
  • Schottky barrier diode
  • High-speed switching
  • Low forward voltage drop
  • High surge current capability

Benefits:

  • Improves power conversion efficiency
  • Reduces switching losses
  • Enables higher operating frequencies
  • Enhances system reliability
  • Simplifies thermal management

Additional Details:

The SCS208AMC offers several advantages over traditional silicon diodes, including lower reverse recovery charge and faster switching speeds. These characteristics enable higher operating frequencies and reduced switching losses, leading to improved power conversion efficiency. The SiC material also allows for operation at higher temperatures, simplifying thermal management and increasing system reliability. The diode's low forward voltage drop further contributes to improved efficiency and reduced power dissipation. This diode is commonly used in power factor correction (PFC) circuits to improve the power factor and reduce harmonic distortion in AC-DC power supplies. The high-speed switching and low forward voltage drop of the SiC Schottky diode enable efficient and reliable PFC operation. The device is used in motor drive applications to improve the efficiency and performance of motor control systems. The fast switching speeds and low losses of the SiC diode enable precise motor control and reduced energy consumption. In electric vehicle (EV) chargers, the diode's high-efficiency and high-temperature operation make it ideal for handling the demanding requirements of EV charging systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.4981 $60.4791
25+ $4.5112 $112.7800
39+ $4.3704 $170.4456
53+ $4.2293 $224.1529
69+ $4.0883 $282.0927
92+ $3.6654 $337.2168
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 18,000 pieces
MOQ: 11 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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