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RQ1E070RPTR

Part No RQ1E070RPTR
Manufacturer Rohm Semiconductor
Catalog FETs - Single
Description MOSFET P-CH 30V 7A TSMT8 / Pch -30V -7A Power MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Rohm Semiconductor
Packaging Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) at 25°C 7A
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Maximum) at Id, Vgs 17mOhm at 7A, 10V
Vgs(th) (Maximum) at Id 2.5V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 26nC at 5V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2700pF at 10V
Power Dissipation (Maximum) 550mW
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package TSMT8
Manufacturer Package 8-SMD, Flat Lead
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 803684-RQ1E070RPTR
Ultra Librarian 3D Model Ultra Librarian RQ1E070RPTR CAD Model

Description

The RQ1E070RPTR is a MOSFET (metal oxide) P-channel FET type integrated circuit (IC) manufactured by Rohm Semiconductor.

  • Mounting: Surface Mount
  • Drive Voltage (max Rds on, min Rds on): 4V, 10V
  • Temperature Range: 150°C
  • Package: 8-SMD, flat lead
  • Power Dissipation (Maximum): 550mW
  • Supply and Demand Status: Balanced
  • Manufacturer Pack Quantity: 3000
  • MSL Level: 1 (unlimited)
  • Rds on (maximum) @ Id, Vgs: 17mOhm @ 7A, 10V
  • Gate Charge (Qg) (maximum) @ Vgs: 26nC @ 5V
  • Input Capacitance (Ciss) (maximum) @ Vds: 2700pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Vgs(th) (maximum) @ Id: 2.5V @ 1mA
  • Maximum Vgs: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5244 $60.3060
270+ $0.4304 $116.2080
420+ $0.4169 $175.0980
575+ $0.4035 $232.0125
745+ $0.3899 $290.4755
995+ $0.3497 $347.9515
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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