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Same model may have multiple batches, images only for reference.
RGW80TS65DGC11 Real Image
Same model may have multiple batches, images only for reference.

RGW80TS65DGC11

Part No RGW80TS65DGC11
Manufacturer Rohm Semiconductor
Catalog IGBTs - Single
Description 650V 40A FIELD STOP TRENCH IGBT / IGBT Trench Field Stop 650 V 78 A 214 W Through Hole TO-247N
Datasheet
RGW80TS65DGC11 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Manufacturer Rohm Semiconductor
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 78 A
Current - Collector Pulsed (Icm) 160 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 40A
Power - Max 214 W
Switching Energy 760µJ (on), 720µJ (off)
Input Type Standard
Gate Charge 110 nC
Td (on/off) @ 25°C 44ns/143ns
Test Condition 400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr) 92 ns
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Supplier Device Package TO-247N
Base Product Number RGW80
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 450
Win Source Part Number 1324497-RGW80TS65DGC11
Ultra Librarian 3D Model Ultra Librarian RGW80TS65DGC11 CAD Model

Description

The Rohm Semiconductor RGW80TS65DGC11 is an IGBT transistor with a trench field stop.

  • Voltage Collector-Emitter Breakdown: 650V
  • Current Collector: 78A
  • Maximum Power Dissipation: 214W
  • Switching Energy (On): 760μJ
  • Switching Energy (Off): 720μJ
  • Mounting: Through-Hole Technology
  • Package: TO-247-3
  • Reverse Recovery Time: 92ns
  • Gate Charge: 110nC

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