The RBW280N03FUBTB is an N-channel power MOSFET manufactured by Rohm Semiconductor. This MOSFET is designed for high-efficiency power switching applications. It features a low on-resistance (RDS(on)) to minimize power loss during operation and is suitable for various DC-DC converters and load switching applications.

Applications:

• DC-DC converters
• Load switching
• Power management circuits
• Motor control circuits
• Synchronous rectification

Features:

• N-Channel Power MOSFET
• Low On-Resistance (RDS(on))
• High-Speed Switching
• Avalanche Rated
• Surface Mount Package

Benefits:

• Reduces power loss in switching applications due to low on-resistance.
• Enables high-efficiency power conversion.
• Suitable for fast switching operations, which are critical in modern power electronics.
• Enhances device reliability and robustness.
• Facilitates easy integration into automated assembly lines.

Technical Specifications:

The RBW280N03FUBTB has a drain-source voltage (VDS) of 30V, a drain current (ID) of 80A, and an on-resistance (RDS(on)) of typically 2.7 mΩ at VGS = 10V. It is available in a surface-mount package and operates reliably across a wide range of temperatures. The avalanche rating ensures robustness against transient voltage spikes.

Note: Always refer to the Rohm Semiconductor datasheet for comprehensive technical information and application guidelines.