The 2SD1961 is a silicon NPN epitaxial planar transistor manufactured by Rohm Semiconductor. This transistor is designed for high-current switching applications. Its key characteristics include a high collector current rating and a relatively low saturation voltage, making it suitable for efficient power control.
Applications:
- Relay and Solenoid Drivers
- Power Supply Circuits
- Motor Control Applications
- Switching Regulators
- General Purpose Switching
Features:
- High Collector Current (IC = 7A): Provides ample current handling capacity for various loads.
- Low Saturation Voltage (VCE(sat)): Minimizes power dissipation and improves efficiency.
- High Collector-Emitter Breakdown Voltage (VCEO = 100V): Ensures reliable operation in higher voltage environments.
- Fast Switching Speed: Enables efficient performance in high-frequency applications.
- TO-220 Package: Offers good thermal dissipation and easy mounting.
Benefits:
- Increased Power Efficiency: Low saturation voltage minimizes energy losses, leading to higher overall efficiency.
- Enhanced Reliability: High breakdown voltage provides a safety margin and protects against voltage spikes.
- Improved Thermal Performance: Low saturation voltage reduces heat generation, simplifying thermal management.
- Faster Switching: Enables quicker response times in switching applications.
- Simplified Design: The TO-220 package allows for easy integration into existing designs.
Additional Details:
The 2SD1961 is often used in industrial equipment, automotive systems, and power supply designs where reliable and efficient switching is essential.
Technical Specifications:
- Polarity: NPN
- Collector-Emitter Voltage (VCEO): 100V
- Collector Current (IC): 7A
- Base Current (IB): 1A
- Collector Dissipation (PC): 30W
- Operating Temperature Range: -55°C to +150°C
- Package Type: TO-220
