The 2SC4100 T106P is an NPN silicon epitaxial transistor manufactured by Rohm Semiconductor. This transistor is designed for high-frequency amplifier applications. Its key features include high gain, and good high-frequency characteristics. The 'T106P' likely refers to specific tape and reel packaging.

Applications

• High-Frequency Amplifiers
• Oscillators
• Mixers
• RF Front-End Circuits
• VHF/UHF Applications

Features

• NPN Silicon Epitaxial Transistor
• High Gain
• High Transition Frequency (fT)
• Small Package

Benefits

• Enhanced Amplification: High gain provides strong signal amplification, improving overall system performance.
• Excellent High-Frequency Performance: High transition frequency enables operation in high-frequency circuits.
• Compact Design: Small package allows for high-density mounting on PCBs.
• Reliable Operation: Rohm Semiconductor's manufacturing ensures stable and reliable performance.

Specifications

While specific electrical characteristics can be found in the Rohm Semiconductor datasheet, typical parameters for the 2SC4100 include:

• Collector-Emitter Voltage (VCEO): 20V
• Collector Current (IC): 50mA
• Power Dissipation (PC): 200mW
• DC Current Gain (hFE): 80 to 400
• Transition Frequency (fT): 5 GHz (Typical)

It's important to consult the official Rohm Semiconductor datasheet for the most accurate and up-to-date specifications, as these values may vary.

The 2SC4100 is well-suited for demanding RF and high-frequency applications. Its compact size and performance characteristics make it a good choice for various communication devices and high-frequency electronic equipment.