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RJK5030DPD-01#J2

Part No RJK5030DPD-01#J2
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 5A MP3A  /  N-Channel 500 V 5A (Ta) 41.7W (Tc) Surface Mount MP-3A
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Renesas Electronics America Inc
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 25 V
Power Dissipation (Max) 41.7W (Tc)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package MP-3A
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
Win Source Part Number 995123-RJK5030DPD-01#J2
Ultra Librarian 3D Model Ultra Librarian RJK5030DPD-01#J2 CAD Model

Description

The Renesas MOSFET (Metal Oxide) is a N-Channel FET transistor designed for discrete semiconductor products.

  • Manufacturer: Renesas
  • Win Source Part Number: 995123-RJK5030DPD-01#J2
  • Package: Tape & Reel (TR)
  • Standard Package: 3,000 units
  • Mounting: SMD (SMT)
  • Drain to Source Voltage (Vdss): 500 V
  • Continuous Drain Current (Id): 5A (Ta) @ 25°C
  • Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Power Dissipation (Max): 41.7W (Tc)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
  • Vgs (Max): ±30V
  • Operating Temperature: 150°C
  • ECCN: EAR99
  • Popularity: low
  • Supply and Demand Status: balance

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