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RJH60F6DPK-00#T0

Name: RJH60F6DPK-00#T0
Brand: Renesas Electronics America
SKU: 891750
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	RJH60F6DPK-00#T0
Manufacturer	Renesas Electronics America
Catalog	IGBTs - Single
Description	IGBT 600V 85A 297.6W TO-3P / IGBT Trench 600 V 85 A 297.6 W Through Hole TO-3P
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr	Renesas Electronics America
Package	Tube
Product Status	Active
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	85 A
Vce(on) (Max) @ Vge, Ic	1.75V @ 15V, 45A
Power - Max	297.6 W
Input Type	Standard
Td (on/off) @ 25°C	58ns/131ns
Test Condition	400V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr)	140 ns
Temperature Range - Operating	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-3P
Base Product Number	RJH60F6
Standard Package	1 pcs
MSL Level	1 (Unlimited)
REACH Status	REACH Affected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	891750-RJH60F6DPK-00#T0
Ultra Librarian 3D Model	Ultra Librarian RJH60F6DPK-00#T0 CAD Model

Alternative Products

Description

The RJH60F6DPK-00#T0 is a single IGBT (Insulated Gate Bipolar Transistor) designed for high-power switching applications.

Category: Discrete semiconductor products
Status: Active
Manufacturer: Renesas Electronics America
Maximum Power Rating: 297.6 W
Collector-Emitter Breakdown Voltage: 600 V
Mounting Type: Through-hole
Package/Case Type: TO-220-3 Full Pack

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
19+	$3.1289	$59.4491
45+	$2.5676	$115.5420
70+	$2.4867	$174.0690
96+	$2.4070	$231.0720
125+	$2.3262	$290.7750
167+	$2.0859	$348.3453

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 139 pieces

MOQ: 19 pcs

Order Increment : 1 pcs

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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