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RJH60F5DPQ

Part No RJH60F5DPQ
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Description IGBT 600V 80A 260.4W TO247A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
IGBT Type Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 80A
Collector-emitter saturation voltage(Max) 1.8V @ 15V, 40A
Maximum Power Dissipation 260.4W
Input Type Standard
Turn-on and Turn-off delay time 53ns/105ns
Testing Conditions 400V, 30A, 5 Ohm, 15V
Reverse Recovery Time (trr) 90ns
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-247A
Win Source Part Number 295116-RJH60F5DPQ
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RJH60F5DPQ CAD Model

Description

The Renesas Electronics America 295116-RJH60F5DPQ is a high popularity electronic component that is in balance in terms of supply and demand.

  • Manufacturer: Renesas Electronics America
  • Category: Discrete semiconductor products
  • Component Type: IGBT (Insulated-Gate Bipolar Transistor) with a trench configuration.
  • Maximum collector-emitter breakdown voltage: 600V
  • Maximum current collector: 80A
  • Maximum power dissipation: 260.4W
  • Suitable for: High voltage and high power applications, such as motor drives and power supplies.

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3539 $58.8475
60+ $1.9312 $115.8720
93+ $1.8711 $174.0123
128+ $1.8110 $231.8080
166+ $1.7498 $290.4668
221+ $1.5696 $346.8816
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,000 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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