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Same model may have multiple batches, images only for reference.
RJH60D6DPK Real Image
Same model may have multiple batches, images only for reference.

RJH60D6DPK

Part No RJH60D6DPK
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Description IGBT 600V 80A 260W TO3P
Datasheet
RJH60D6DPK Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
IGBT Type Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 80A
Collector-emitter saturation voltage(Max) 2.2V @ 15V, 40A
Maximum Power Dissipation 260W
Total Switching Energy(Ets) 850μJ (on), 600μJ (off)
Input Type Standard
Gate Charge 104nC
Turn-on and Turn-off delay time 50ns/160ns
Testing Conditions 300V, 40A, 5 Ohm, 15V
Reverse Recovery Time (trr) 100ns
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Win Source Part Number 210768-RJH60D6DPK
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RJH60D6DPK CAD Model

Description

The Renesas Electronics America RJH60D6DPK is an active electronic component that is part of the Discrete Semiconductor Products category.

  • Product: IGBT transistor
  • Designed for: Use in high power switching applications.
  • Maximum collector-emitter breakdown voltage: 600V
  • Maximum collector current: 80A
  • Package: TO-3P
  • Maximum power dissipation: 260W
  • Reverse recovery time: 100ns
  • Gate charge: 104nC
  • Ideal for: Motor control, power supplies, and welding equipment.

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119+ $2.9141 $346.7779
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Availability: 4,500 pieces
MOQ: 14 pcs
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