The R1LV1616RBA-5SI is a high-speed, low-power Static Random Access Memory (SRAM) manufactured by Renesas Electronics America. It is designed for applications requiring fast access times and low power consumption, making it suitable for various embedded systems and portable devices.

Applications

• High-speed cache memory
• Embedded systems
• Portable devices
• Digital signal processing (DSP) systems
• Networking equipment

Features

• High-speed access time: 5ns
• Low power consumption
• Single 3.3V power supply
• Operating temperature range: -40°C to +85°C
• 16Mbit density
• Organized as 1,048,576 words x 16 bits
• Available in a 44-pin TSOP package

Benefits

• Enables high-performance operation in embedded systems due to its fast access time.
• Reduces power consumption, extending battery life in portable devices.
• Simplifies system design with a single 3.3V power supply requirement.
• Provides reliable operation in a wide range of temperatures.
• Saves board space with its compact TSOP package.

Technical Specifications

The R1LV1616RBA-5SI features a typical access time of 5ns and operates on a single 3.3V power supply. It is organized as 1,048,576 words by 16 bits, providing a total memory capacity of 16Mbits. The device is available in a 44-pin TSOP package, allowing for easy integration into existing systems. The operating temperature range is specified from -40°C to +85°C, making it suitable for industrial applications. The device is RoHS compliant.