The NP36N055IHE is an N-channel power MOSFET produced by Renesas Electronics America. Designed for high-efficiency power switching applications, this MOSFET offers low on-resistance and fast switching characteristics, contributing to reduced power loss and improved system performance.

Applications

• Synchronous rectification in DC-DC converters
• Motor control circuits
• Power management systems
• Load switches
• Automotive applications

Features

• N-channel enhancement mode MOSFET
• Low on-state resistance (Rds(on))
• High-speed switching capability
• Avalanche energy rated
• Surface mount packaging

Benefits

• Improved energy efficiency due to low on-resistance, minimizing power dissipation.
• Fast switching speeds reduce switching losses and enable higher frequency operation.
• Avalanche rating provides increased robustness and reliability in demanding applications.
• Compact surface mount package allows for higher density designs.

Technical Specifications:

Channel Type: N-Channel

Drain-Source Voltage (Vds): Consult the device datasheet for specific voltage rating.

Gate-Source Voltage (Vgs): Consult the device datasheet for specific voltage rating.

Continuous Drain Current (Id): Consult the device datasheet for specific current rating.

On-Resistance (Rds(on)): Consult the device datasheet for specific on-resistance value at a specified gate voltage.