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ISL6612EIBZ

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Part No	ISL6612EIBZ
Manufacturer	Renesas Electronics America
Catalog	PMIC - Gate Drivers
Description	IC GATE DRVR HALF-BRIDGE 8SOIC / Half-Bridge Gate Driver IC Non-Inverting 8-SOIC-EP
Datasheet	ISL6612EIBZ Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Integrated Circuits (ICs)>PMIC - Gate Drivers
Mfr	Renesas Electronics America Inc
Package	Tube
Product Status	Obsolete
Driven Configuration	Half-Bridge
Channel Type	Synchronous
Number of Drivers	2
Gate Type	N-Channel MOSFET
Voltage - Supply	10.8V ~ 13.2V
Current - Peak Output (Source, Sink)	1.25A, 2A
Input Type	Non-Inverting
High Side Voltage - Max (Bootstrap)	36 V
Rise / Fall Time (Typ)	26ns, 18ns
Temperature Range - Operating	-40°C ~ 125°C (TJ)
Mounting	SMD (SMT)
Package / Case	8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package	8-SOIC-EP
Base Product Number	ISL6612
MSL Level	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8542.39.0001
Standard Package	980
Win Source Part Number	1065913-ISL6612EIBZ
Ultra Librarian 3D Model	Ultra Librarian ISL6612EIBZ CAD Model

Alternative Products

Description

The Renesas Electronics America Inc 1065913-ISL6612EIBZ is an integrated circuit that is ideal for use in PMIC - gate drivers. 1065913-ISL6612EIBZ is manufactured by Renesas Electronics America Inc

Driven Configuration: Half-bridge
Gate Type: Two N-channel MOSFET gate drivers
Input Type: Non-inverting
Peak Output Current (Source): 1.25A
Peak Output Current (Sink): 2A
Maximum High Side Voltage (Bootstrap): 36 V
Voltage Supply: 10.8V ~ 13.2V
Case/Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
HTSUS Code: 8542.39.0001
Device Status: Obsolete

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