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IDT70V3389S6BFG

Part No IDT70V3389S6BFG
Manufacturer Renesas Electronics America
Catalog RAM
Description SRAM Chip Sync Dual 3.3V 1.125M-Bit 64K x 18 6ns 208-Pin CABGA T/R
Sample
Rohs State rohs
ECAD Module
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RoHS Compliant
Win Source Part Number 1220972-IDT70V3389S6BFG
Categories RAM
Manufacturer Renesas Electronics America
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IDT70V3389S6BFG CAD Model

Description

The IDT70V3389S6BFG is a high-speed 256K x 18 Dual-Port Static RAM (SRAM) manufactured by Renesas Electronics America (originally IDT). This device is designed for applications that require simultaneous and asynchronous access to memory from two independent sources.

Applications

  • Networking equipment (routers, switches)
  • Telecommunications systems
  • High-performance computing
  • Data acquisition systems
  • Image processing

Features

  • Simultaneous read/write capability from two independent ports
  • High speed: 6ns access time
  • Low power operation
  • On-chip arbitration logic to prevent data contention
  • Interrupt flags for inter-processor communication
  • Bus matching capability
  • Fully asynchronous operation

Benefits

  • Enables concurrent data access, improving system performance in multi-processor environments.
  • Reduces latency due to its very fast access time.
  • Simplifies system design with integrated arbitration logic and asynchronous operation.
  • Facilitates inter-processor communication with interrupt flags.
  • Allows flexible interfacing with different bus widths due to bus matching capability.

Additional Details

The IDT70V3389S6BFG offers simultaneous read and write access from two independent ports, greatly increasing memory throughput in systems that require parallel data processing. The on-chip arbitration logic ensures data integrity by resolving contention between the two ports. The interrupt flags provide a mechanism for signaling data availability between processors. It operates at 3.3V and offers very fast access times.

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