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IDT70V3389S5BFI

Part No IDT70V3389S5BFI
Manufacturer Renesas Electronics America
Catalog RAM
Description IC SRAM 1.125MBIT 5NS 208CABGA
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Interface Parallel
Maximum Operating Temperature 85 °C
Memory Type RAM, SRAM
Min Operating Temperature -40 °C
Number of Pins 208
RoHS Non-Compliant
Win Source Part Number 1026243-IDT70V3389S5BFI
Categories RAM
Manufacturer Renesas Electronics America
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IDT70V3389S5BFI CAD Model

Description

The IDT70V3389S5BFI, now under Renesas Electronics America, is a high-speed, synchronous Static RAM (SRAM) device organized as 128K x 36 bits. This SRAM is designed for applications requiring fast access times, low power consumption, and high data throughput, such as networking, telecommunications, and high-performance computing systems.

Applications

  • Networking Equipment (Routers, Switches)
  • Telecommunications Systems
  • High-Performance Computing
  • Cache Memory
  • Digital Signal Processing (DSP)

Features

  • Fast Access Time: Provides quick data access for demanding applications.
  • Synchronous Operation: Operates in synchronization with the system clock for predictable timing.
  • 128K x 36-Bit Organization: Offers a large memory capacity with a wide data path.
  • Low Power Consumption: Reduces power usage in battery-powered or energy-sensitive applications.
  • Byte Write Enable: Allows for writing individual bytes within a 36-bit word.

Benefits

  • Improved System Performance: Enables faster data processing and throughput.
  • Reduced Power Consumption: Extends battery life or reduces overall system power requirements.
  • Increased Memory Capacity: Provides ample storage for large datasets.
  • Simplified Memory Management: Offers flexible byte-write capability.
  • Reliable Operation: Ensures stable and dependable performance in demanding environments.

Additional Details

The IDT70V3389S5BFI SRAM is designed for high-speed memory applications, with a typical access time of around 5ns. The synchronous nature of the device ensures that data transfers occur in a predictable and controlled manner, minimizing timing uncertainties. The device's byte write enable feature allows for selectively updating individual bytes within a 36-bit word, which can be useful in applications where only a portion of the data needs to be modified. Detailed specifications for the IDT70V3389S5BFI, including voltage requirements, timing parameters, and operating temperature range, can be found in the official Renesas datasheet. The SRAM is packaged in a BGA package.

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