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Same model may have multiple batches, images only for reference.
HAT1069C-EL-E Renesas Electronics America
Same model may have multiple batches, images only for reference.

HAT1069C-EL-E

Part No HAT1069C-EL-E
Manufacturer Renesas Electronics America
Catalog HOT - SALES and EOL Components
Description Silicon P Channel Power MOSFET Power Switching | MOSFET P-CH SMD
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 12V
Id - Continuous Drain Current 4A
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Maximum) at Id, Vgs 52mOhm at 1.5A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 1.2V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 16nC at 4.5V
Gate Source Voltage (Maximum) ±8V
Input Capacitance (Ciss) (Maximum) at Vds 1380pF at 10V
Power Dissipation (Maximum) 900mW
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package 6-CMFPAK
Manufacturer Package 6-SMD, Flat Leads
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 271436-HAT1069C-EL-E
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HAT1069C-EL-E CAD Model

Description

This component, manufactured by Renesas Electronics America, has sufficient supply and demand. Its Win Source Part Number is 271436. It features SMD mounting style and falls under Discrete Semiconductor Products.

  • Technology: MOSFET
  • Transistor Polarity: P-Channel
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Status: Obsolete
  • Operating Temperature: 150°C
  • Package: 6-SMD, Flat Leads
  • Power Dissipation (Maximum): 900mW
  • Manufacturer Pack Quantity: 2,500
  • MSL Level: 1 (Unlimited)
  • Vds - Drain-Source Breakdown Voltage: 12V
  • Id - Continuous Drain Current: 4A
  • Rds On (Maximum) @ Id, Vgs: 52mOhm @ 1.5A, 4.5V
  • Gate Source Voltage(th) (Maximum) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Maximum) @ Vgs: 16nC @ 4.5V
  • Gate Source Voltage (Maximum): ±8V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 1380pF @ 10V

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95+ $1.1045 $104.9275
145+ $1.0700 $155.1500
195+ $1.0355 $201.9225
250+ $1.0010 $250.2500
335+ $0.8974 $300.6290
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