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Same model may have multiple batches, images only for reference.
FA4L4L-T1B-A
Same model may have multiple batches, images only for reference.

FA4L4L-T1B-A

Part No FA4L4L-T1B-A
Manufacturer Renesas Electronics America
Catalog Transistors (BJT) - Single, Pre - Biased
Description FA4L - BUILT-IN RESISTOR BIPOLAR / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 200 mW Surface Mount SC-59
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Renesas
Package Bulk
Product Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 47 kOhms
Resistor - Emitter Base (R2) 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 200mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA
Power - Max 200 mW
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-59
RoHS Status RoHS non-compliant
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-FA4L4L-T1B-A
Standard Package 1
Win Source Part Number 1058444-FA4L4L-T1B-A
Ultra Librarian 3D Model Ultra Librarian FA4L4L-T1B-A CAD Model

Description

The Renesas Electronics America FA4L4L-T1B-A transistor is a pre-biased NPN bipolar transistor that is categorized under discrete semiconductor products.

  • Maximum Power: 200mW
  • Voltage Collector-Emitter Breakdown: 50V
  • Maximum Collector Current: 100mA
  • Vce Saturation: 200mV @ 250μA and 5mA
  • Current Collector Cutoff: 100nA
  • DC Current Gain (hFE): 90 @ 5mA and 5V
  • Package/Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
  • Status: Obsolete
  • RoHS Regulations: Non-compliant
  • Resistor-Base (R1): 47 kOhms
  • Resistor-Emitter Base (R2): 22 kOhms
  • Classification: EAR99
  • Counterfeit Risk: 58%

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