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71V65603S100BQGI8

Part No 71V65603S100BQGI8
Manufacturer Renesas Electronics America
Catalog Memory
Description IC SRAM 9MBIT PAR 165CABGA / SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 100 MHz 5 ns 165-CABGA (13x15)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory>Memory
Mfr Renesas Electronics America
Series -
Package Tape & Reel (TR)
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Synchronous, SDR (ZBT)
Memory Size 9Mbit
Memory Organization 256K x 36
Memory Interface Parallel
Clock Frequency 100 MHz
Write Cycle Time - Word, Page -
Access Time 5 ns
Voltage - Supply 3.135V ~ 3.465V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 165-TBGA
Supplier Device Package 165-CABGA (13x15)
Base Product Number 71V65603
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Standard Package 2,000 pcs
Win Source Part Number 1381051-71V65603S100BQGI8
Ultra Librarian 3D Model Ultra Librarian 71V65603S100BQGI8 CAD Model

Description

The 1381051-71V65603S100BQGI8 is a memory integrated circuit belonging to the SRAM - Synchronous, SDR (ZBT) technology and manufactured by Renesas Electronics America.

  • Memory Technology: SRAM - Synchronous, SDR (ZBT)
  • Memory Size: 9Mbit
  • Access Time: 5 ns
  • Voltage Supply: 3.135V to 3.465V
  • Mounting Type: Surface Mount
  • Package: Tape & Reel
  • Quantity per Package: 2,000
  • Clock Frequency: 100 MHz
  • Memory Interface: Parallel
  • REACH Status: Unaffected
  • HTSUS Code: 8542.32.0041
  • Moisture Sensitivity Level: 3 (Maximum exposure time of 168 hours to moisture)

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