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Same model may have multiple batches, images only for reference.
71V416L10PHG Real Image
Same model may have multiple batches, images only for reference.

71V416L10PHG

Part No 71V416L10PHG
Manufacturer Renesas Electronics America
Catalog RAM
Description IC SRAM 4MBIT PARALLEL 44TSOP II / SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10 ns 44-TSOP II
Datasheet
71V416L10PHG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory
Mfr Renesas Electronics America Inc
Package Tray
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 4Mb (256K x 16)
Memory Interface Parallel
Write Cycle Time - Word, Page 10ns
Access Time 10 ns
Voltage - Supply 3V ~ 3.6V
Temperature Range - Operating 0°C ~ 70°C (TA)
Mounting SMD (SMT)
Package / Case 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package 44-TSOP II
Base Product Number 71V416
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Other Names 800-1476,800-1476-5,IDT71V416L10PHG,800-1476-ND
Standard Package 135
Win Source Part Number 1216120-71V416L10PHG
Ultra Librarian 3D Model Ultra Librarian 71V416L10PHG CAD Model

Description

The 1216120-71V416L10PHG from Renesas Electronics America Inc is a 4Mb (256K x 16) SRAM asynchronous memory integrated circuit with a 10 ns access time.

  • Memory Size: 4Mb (256K x 16)
  • Memory Type: SRAM Asynchronous
  • Access Time: 10 ns
  • Voltage Supply: 3V to 3.6V
  • Package: 44-TSOP (0.400", 10.16mm Width) Tray
  • Supplier Device Package: 44-TSOP II
  • Memory Interface: Parallel
  • Write Cycle Time: 10ns
  • MSL Level: 3 (168 hours)
  • REACH Status: REACH unaffected

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