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2SK3653B

Part No 2SK3653B
Manufacturer Renesas Electronics America
Catalog JFETs (Junction Field Effect)
Description N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM / Trans JFET N-CH 20V 10mA Si 3-Pin XSOF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Renesas Electronics America
Win Source Part Number 160221-2SK3653B
Popularity Medium
Supply and Demand Status Sufficient
Family Name 2SK3653B
Introduction Date August 16, 2004
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SK3653B CAD Model

Description

Product Overview

The 2SK3653B is a high-performance N-channel MOSFET designed for efficient power management solutions. Manufactured with advanced technology, this transistor is optimized for low resistance and high-speed switching applications. Its compact design makes it suitable for a wide range of electronic applications.

Applications

  • Switching power supplies
  • Motor drivers
  • Battery-powered equipment
  • DC-DC converters

Features and Benefits

  • Low On-Resistance: Provides efficiency in switching operations.
  • High-Speed Switching: Optimized for reduced energy loss.
  • Compact Package: Facilitates integration into tight spaces.
  • Reliable Thermal Performance: Ensures stable operation in diverse environments.

Additional Details

This MOSFET is commonly used in applications that demand high power efficiency. Its reliability and fast switching capabilities make it a preferred choice for industrial and consumer electronics.

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