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Same model may have multiple batches, images only for reference.
2SK1342-E Real Image
Same model may have multiple batches, images only for reference.

2SK1342-E

Part No 2SK1342-E
Manufacturer Renesas Electronics America
Catalog FETs - Single
Description MOSFET N-CH 900V 6A TO-3P / Silicon N Channel MOS FET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Renesas Electronics America
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) at 25°C 8A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.6Ohm at 4A, 10V
Maximum Vgs ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1730pF at 10V
Power Dissipation (Maximum) 100W (Tc)
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-3P
Manufacturer Package TO-3P-3, SC-65-3
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 811645-2SK1342-E
Ultra Librarian 3D Model Ultra Librarian 2SK1342-E CAD Model

Description

The Renesas Electronics America 2SK1342-E is a MOSFET that belongs to the Metal Oxide technology.

  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 900V
  • Win Source Part Number: 811645
  • Packaging: Tube
  • Supply and Demand Status: Limited
  • Manufacturer Package: TO-3P-3, SC-65-3

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