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2SJ529STL-E

Part No 2SJ529STL-E
Manufacturer Renesas Electronics America
Catalog JFETs (Junction Field Effect)
Description Silicon P Channel MOS FET / Trans MOSFET P-CH Si 60V 10A 3-Pin(2+Tab) DPAK(S) T/R
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Renesas Electronics America
Win Source Part Number 158711-2SJ529STL-E
Popularity Medium
Supply and Demand Status Balance
Family Name 2SJ529S
Introduction Date March 19, 2001
ECCN EAR99
Estimated EOL Date 2023
Ultra Librarian 3D Model Ultra Librarian 2SJ529STL-E CAD Model

Description

The 2SJ529STL-E is a P-channel MOSFET transistor boasting a robust set of features that make it an ideal choice for various electronic applications. As a high-performance component, it is designed to offer exceptional efficiency and reliability.

Features and Benefits

  • High Drain Current: This MOSFET can handle substantial current loads, making it suitable for high-powered applications.
  • Low On-Resistance: It features a low on-resistance, which ensures minimal power loss during operation, enhancing efficiency.
  • Thermal Stability: Designed to operate within a wide temperature range, the 2SJ529STL-E is reliable in various environmental conditions.
  • Compact Package: Its compact form factor supports easy integration into smaller circuits and devices.

Applications

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Battery-Powered Devices
  • Automotive Electrical Systems

The 2SJ529STL-E is often employed in power management solutions that require precise control and efficient switching. Its P-channel configuration is particularly useful in high-side switching applications.

Overall, the 2SJ529STL-E is a versatile MOSFET designed to meet the demands of modern electronic designs, offering both performance and reliability.

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