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2SJ506STR-E

Part No 2SJ506STR-E
Manufacturer Renesas Electronics America
Catalog JFETs (Junction Field Effect)
Description Trans MOSFET P-CH Si 30V 10A 3-Pin(2+Tab) DPAK(S) T/R
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Renesas Electronics America
Win Source Part Number 158690-2SJ506STR-E
Popularity Low
Supply and Demand Status Balance
Family Name 2SJ506S
ECCN EAR99
Estimated EOL Date 2023
Ultra Librarian 3D Model Ultra Librarian 2SJ506STR-E CAD Model

Description

The 2SJ506STR-E is a P-channel MOSFET that offers excellent reliability and efficiency, making it a prime choice for modern electronic designs. Engineered for various applications, this MOSFET enhances system performance and efficiency.

Features and Benefits

  • Enhanced Thermal Performance: This component comes with enhanced thermal stability, ensuring consistent performance across a range of temperatures.
  • Efficient Power Management: With its optimized design, the 2SJ506STR-E efficiently handles power loads, making it ideal for power-sensitive applications.
  • Compact Package: Its compact size allows for integration into space-constrained applications, facilitating more flexible design options.

Applications

  • Smart Grids
  • Photovoltaic Inverters
  • Charge Regulators
  • Switching Regulators

The 2SJ506STR-E stands out for its reliability in power management systems, ensuring stable and efficient operation in renewable energy projects and advanced grid systems. Its low on-state resistance further promotes energy saving in high-efficiency swapping circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.3601 $61.0414
33+ $3.5782 $118.0806
50+ $3.4662 $173.3100
69+ $3.3541 $231.4329
90+ $3.2421 $291.7890
120+ $2.9071 $348.8520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,600 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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