The 2SA1645-AZ-M is a PNP epitaxial silicon transistor manufactured by Renesas Electronics America. It is designed for use in low-frequency amplifier applications and switching applications. This transistor offers a good balance of voltage, current, and speed characteristics, making it suitable for a variety of general-purpose applications.

Applications

• Low-frequency amplifiers
• Switching circuits
• General-purpose linear applications
• Driver stages

Features

• PNP Epitaxial Silicon Transistor
• Low Collector Saturation Voltage
• High Collector Current Capability
• Low Noise Figure
• High hFE Linearity

Benefits

• Improved circuit performance due to low saturation voltage.
• Extended operating life due to high reliability.
• Reduced component count due to versatility.
• Enhanced signal amplification due to high hFE.
• Suitable for high-density mounting

Specifications

Collector-Base Voltage (VCBO): -60V

Collector-Emitter Voltage (VCEO): -50V

Emitter-Base Voltage (VEBO): -5V

Collector Current (IC): -150mA

Collector Power Dissipation (PC): 400mW

DC Current Gain (hFE): 85 to 170 (for AZ rank)

Operating Junction Temperature (Tj): 150°C

Storage Temperature (Tstg): -55°C to +150°C

Package: SOT-23

The 2SA1645-AZ-M is a small signal transistor housed in a surface-mount SOT-23 package, making it ideal for compact designs. Its performance characteristics make it a reliable choice for various analog and switching applications. The 'AZ' suffix likely refers to a specific gain (hFE) rank within the manufacturing process.