The 2SA1052C is a PNP silicon epitaxial transistor manufactured by Renesas Electronics America. It is designed for use in low-frequency amplifier applications and switching applications. This transistor offers a good balance of voltage, current, and power dissipation capabilities.

Applications

• Audio amplifiers
• Switching circuits
• General-purpose amplification
• Driver stages
• Consumer electronics

Features

• PNP Silicon Epitaxial Transistor
• Low saturation voltage
• High hFE linearity
• Low noise figure
• Compact package

Benefits

• Provides stable amplification in audio circuits.
• Enables efficient switching performance.
• Reduces power loss due to its low saturation voltage.
• Offers reliable performance in various electronic applications.
• Easy to use in compact designs due to its small form factor.

Technical Specifications

The 2SA1052C has the following general specifications:

• Polarity: PNP
• Collector-Emitter Voltage (VCEO): -50V
• Collector Current (IC): -1.5A
• Power Dissipation (PC): 1W
• DC Current Gain (hFE): 100 to 320 (depending on the specific grade)
• Transition Frequency (fT): 100 MHz
• Operating Temperature Range: -55°C to +150°C

It is commonly available in a TO-92 package. The 2SA1052C is a reliable and versatile transistor suitable for a variety of amplifier and switching applications.