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1SS86-E

Part No 1SS86-E
Manufacturer Renesas Electronics America
Catalog Schottky Diodes
Description Silicon Uhf Band Mixer Diode DO-35
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Average Rectified Current 30 mA
RoHS Compliant
Win Source Part Number 1108620-1SS86-E
Categories Schottky Diodes
Manufacturer Renesas Electronics America
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 1SS86-E CAD Model

Description

The 1SS86-E is a Schottky barrier diode manufactured by Renesas Electronics America. As a Schottky diode, it is characterized by its low forward voltage drop and fast switching speed, making it suitable for various high-frequency and high-speed applications.

Applications:

  • High-Speed Rectification: Used in circuits where fast and efficient rectification is required, such as in switching power supplies.
  • RF Detectors: Employed in detecting RF signals due to their ability to quickly respond to changes in signal amplitude.
  • Voltage Clamping: Protects sensitive circuits from voltage spikes by clamping the voltage to a safe level.
  • Mixing Circuits: Utilized in mixer circuits to convert signals from one frequency to another.
  • Sampling Circuits: Used in sampling circuits for fast signal acquisition and processing.

Features:

  • Low Forward Voltage Drop: Minimizes power loss and improves efficiency in rectifier applications.
  • Fast Switching Speed: Enables high-frequency operation and reduces switching losses.
  • Small Package: Allows for compact designs and high-density circuit board layouts.
  • Low Capacitance: Reduces signal distortion and improves high-frequency performance.
  • High Surge Current Capability: Can withstand high surge currents without damage.

Benefits:

  • Improved Efficiency: Reduces power consumption and heat generation in rectifier circuits.
  • Enhanced High-Frequency Performance: Enables fast and accurate signal processing in high-frequency applications.
  • Compact Design: Allows for miniaturization of electronic devices.
  • Protection Against Voltage Spikes: Prevents damage to sensitive components from overvoltage conditions.
  • Robustness: Provides reliable performance in demanding operating conditions.

Additional Details:

While specific technical specifications like peak reverse voltage, forward current, and forward voltage drop require a detailed datasheet, typical Schottky diodes, including the 1SS86-E, utilize a metal-semiconductor junction to achieve their fast switching speed and low forward voltage drop. Packaging may vary based on the application, but surface mount packages are common. Consult the official Renesas datasheet for complete specifications and application guidelines.

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $2.2857 $59.4282
62+ $1.8757 $116.2934
96+ $1.8168 $174.4128
132+ $1.7579 $232.0428
170+ $1.6990 $288.8300
228+ $1.5234 $347.3352
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50,030 pieces
MOQ: 26 pcs
Order Increment : 1 pcs
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